FYSV446 Challenges and Radiation Performance of Advanced and Emerging CMOS Technologies (JSS28) (1 op)

Sisältö

CMOS devices, driven by minimum device geometry, performance enhancement, cost issues and low power consumption, are achieved by using optimizing process modules, introducing new materials and implementing novel device concepts. FD technologies with ultra-thin body and buried oxide (UTBB SOI) have potential down to the 10 nm mode. There exists strong competition between planar UTBB SOI and bulk FinFETs. Tunnel-FETs (TFETs), relying on band-to-band-tunneling and allowing steep subthreshold swings are enabling a lower power consumption. Further scaling leads to gate-all-around and nanowire devices. Optimized epitaxial growth resulted in the fabrication of Ge (p-channel), III-V (n-channel) or hybrid Ge/III-V devices on a Si substrate.
The radiation performance of several of these advanced and emerging technologies will be analyzed and discussed. Some of the available models to explain the experimental data will be reviewed.

Suoritustavat

Lectures and computer exercises (TBD)